Abstract
The effect of thermal annealing atmosphere on the electrical characteristics of Zinc oxide (ZnO) nanorods/p-Silicon (Si) diodes is investigated. ZnO nanorods are grown by low-temperature aqueous solution growth method and annealed in Nitrogen and Oxygen atmosphere. As-grown and annealed nanorods are studied by scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy. Electrical characteristics of ZnO/Si heterojunction diodes are studied by current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. Improvements in rectifying behaviour, ideality factor, carrier concentration, and series resistance are observed after annealing. The ideality factor of 4.4 for as-grown improved to 3.8 and for Nitrogen and Oxygen annealed improved to 3.5 nanorods diodes. The series resistances decreased from 1.6 to 1.8 times after annealing. An overall improved behaviour is observed for oxygen annealed heterojunction diodes. The study suggests that by controlling the ZnO nanorods annealing temperatures and atmospheres the electronic and optoelectronic properties of ZnO devices can be improved.
Highlights
Zinc oxide (ZnO) is a direct and wideband gap (3.37 eV) semiconductor with large exciton binding energy (60 meV)
The morphology of nanorods was studied by scanning electron microscopy (SEM)
The effects of nitrogen and oxygen annealing atmosphere have been investigated on the diode characteristics of ZnO nanorods/Si heterojunction
Summary
Zinc oxide (ZnO) is a direct and wideband gap (3.37 eV) semiconductor with large exciton binding energy (60 meV). Manuscript received 16 February, 2021; accepted 3 June, 2021 Their electronic and optical properties are strongly influenced by the presence of point defects and strains contained in nanorods. Annealing at different temperatures and atmospheres removes impurities and structural defects from the crystal lattice and improves the electronic and optoelectronic properties of ZnO devices. Electrical and optical properties of ZnO/Si heterojunction may be modulated by controlling the ZnO nanorods growth temperature, annealing temperature, and atmosphere [9], [14]. Decreased reverse current and improved rectification are observed for diodes of O2 annealed nanorods [13]. Y. Tu et al have reported optimized performance with increased carrier concentration observed in ZnO nanorods diodes with hydrothermal seed layer pre-annealed in various. Current-voltage (I-V) and capacitance-voltage (C-V) measurements were performed by using Keithley SCS-4200 semiconductor characterization System
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