Abstract
Indium telluride (In2Te3) thin films were synthesized on glass substrates using thermal evaporation method under the vacuum of the order of 10−6 torr. The role of annealing and substrate temperatures on the growth of In2Te3 thin films was investigated. The structure, surface morphology, and composition of films were studied by X-ray diffraction (XRD), scanning electron microscope (SEM) and energy dispersive analysis of X-rays (EDAX), respectively. The as-deposited films at substrate temperature 25 °C and 150 °C were found to be non-stoichiometric. The films deposited at 150 °C substrate temperature and post-annealed at 300 °C for 1 h were stoichiometric in composition and the XRD analysis revealed that these films were cubic in nature with preferred orientation along (5 1 1) plane. The electrical studies revealed that the films were p-type in nature. In addition, the resistivity and optical band gap of optimized films found to be 33 × 10−2 Ω-cm and 0.99 eV, respectively.
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