Effect of Annealing Ambient on SnO2 Thin Film Transistors Fabricated via An Ethanol-based Sol-gel Route

Hyunjae Lee,Won-Yong Lee,Kwangeun Kim,Jin-Hyuk Bae,Seunghyun Ha,Jaewon Jang,In-Man Kang

doi:10.3390/electronics8090955

Hyunjae Lee, Won-Yong Lee + Show 5 more

Open Access

https://doi.org/10.3390/electronics8090955

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Journal: Electronics	Publication Date: Aug 29, 2019
Citations: 17	License type: CC BY 4.0

Affiliation: Kyungpook National University, Hongik University

Abstract

The effect of annealing ambient on SnO2 thin-film transistors (TFTs) fabricated via an ethanol-based sol-gel route was investigated. The annealing ambient has a significant effect on the structural characteristics and chemical composition and, in turn, the device performance. Although the crystalline-grain size of the SnO2 films annealed in air was the smallest, this size yielded the highest field-effect mobility. Compared with the minimization of boundary scattering via crystalline-size increase, augmentation of the free carrier concentration played a more critical role in the realization of high-performance devices. The fabricated SnO2 TFTs delivered a field-effect mobility, subthreshold swing, and on/off current ratio of 10.87 cm2/Vs, 0.87 V/decade, and 107, respectively.

Highlights

Oxide semiconductor-based thin-film transistors (TFTs) are characterized by high electron mobility, a wide band gap, and applicability to various high-performance and transparent devices
Oxide TFTs based on Indium-based metal oxides have been extensively studied in the last decade
Indium is a costly and rare metal that is found in only a few mining spots worldwide [5] and, a new metal oxide system is required

Summary

Introduction

Oxide semiconductor-based thin-film transistors (TFTs) are characterized by high electron mobility, a wide band gap, and applicability to various high-performance and transparent devices. The demand for these TFTs has increased. Representative n-type metal oxide semiconductors include ZnO, In2 O3 , and SnO2 Among these materials, SnO2 has the largest band gap, and is characterized by a high intrinsic mobility and low melting point. SnO2 has the largest band gap, and is characterized by a high intrinsic mobility and low melting point These features are attractive for applications that require high performance and transparent materials [6,7,8]. Annealing conditions play a critical role in determining the defect sites formed inside the material and, have a significant on the device performance [15,16,17]

Materials and Methods

TFTs were onwas thermally grown

Discussion

The performance of the

Conclusions