Abstract
The harvesting of solar energy through silicon/graphene Schottky junction photovoltaic cell has been widely investigated in the last decade but the surface recombination at interface limits the high conversion efficiency. We have demonstrated the utilization of the optimum thickness (1.5 nm) of Al2O3 between the interfaces of graphene and n-type Si as an interlayer to reduce the surface recombination along with chemical doping of perfluorinated polymeric sulfonic acid (PFSA) is used as a p-type dopant to modulate the work function of graphene. The Kelvin probe force microscopy (KPFM) analysis revealed that the p-doping enhances the graphene work function from 4.65 to 4.8 eV. The transport measurements are performed to study the shift in charge neutrality point of graphene. Furthermore, the effect of PFSA doping on graphene is also confirmed through Raman spectroscopy. The maximum value of power conversion efficiency (PCE) was found to be 13.52% (100 mW cm−2, AM 1.5) by introducing an optimal oxide layer and PFSA doping. The device exhibits the photoresponsivity of 0.10 AW−1. We believe that our findings will provide a route toward the development of new photovoltaic (PV) cells.
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