Abstract
AbstractAs an effort to investigate new techniques to reduce the effect of the strong internal polarization fields in (In,Ga)N/GaN quantum well (QW) structures we have studied the influence of inserting a thin wide bandgap Al0.95In0.05N interlayer inside the QWs, in order to modify the potential and increase the electron–hole overlap. A strong reduction of the decay times of the photoluminescence (PL) was observed in this case at all temperatures up to 300 K, without a strong reduction in PL intensity. The tunneling electron–hole transition across the interlayer is observed to be dominant at room temperature for high excitation conditions. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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