Abstract
We present an improved description of the defect creation kinetics in amorphous silicon thin film transistors and analyze in detail the dependence on the key amorphous silicon material properties: Urbach energy, hydrogen content, hydrogen bonding and intrinsic stress. The results support a model for defect creation, involving Si–Si bond breaking, with only local hydrogen bonding rearrangements to stabilize the broken bond, as opposed to models involving long range hydrogen diffusion. On the other hand, defect annealing proceeds by breaking Si–H bonds and long-range diffusion of hydrogen.
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