Abstract
Effect of ammonium concentration on optical, structural and surface roughness properties of Nb2O5 thin films is conducted in this work. Estimated optical band gap and optical constant confirm the dependency of Nb2O5 thin films on ammonium molarity. The band gap in the range of 3.3 to 4.7 eV is directly related to the solution properties. The structural properties are recorded by x-ray diffraction method that display the formation of monoclinic niobium pentoxide (H-Nb2O5) thin films. Optimum molarity at 12 M reveals the prime ammonium concentration for the Nb2O5 thin films formation. The energy gap at optimum preparation state ensures the development of semiconducting material that suits solar cell and other optoelectronics application. AFM results show a highly uniform surface. Grain size is observed to increase with ammonium concentration and recorded to reach its maximum of 85.28 nm at 12 M.
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