Abstract
Polycrystalline SnO 2 thin films were deposited on sapphire substrates at 450°C under different ambient oxygen pressures by pulsed laser deposition technique. The effect of ambient oxygen pressure on the structural, optical and electrical properties of SnO 2 thin films was studied. X-ray diffraction and Hall measurements show that increasing the ambient oxygen pressure can improve crystallization of the films and decrease resistivity of the films. A violet emission peak centered at 409 nm was observed from photoluminescence measurements for SnO 2 films under deposition ambient oxygen pressure above 5 Pa, which is related to the improvement of crystalline of the films.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
