Abstract
We have investigated the effect of hydrogen atoms on the pulsed laser deposition of GaN using a nitrogen–hydrogen forming gas with a hydrogen content of 4 mol% for the first time. We have found that the near-band-edge photo-luminescence emission of GaN is considerably increased and the width of X-ray rocking curve is reduced by the addition of hydrogen. These improvements probably stem from reduction of the dislocation density in the GaN films caused by the enhanced migration of Ga atoms on the GaN surface during the growths.
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