Abstract
We present the results of ab initio study of electronic and magnetic properties of Gd(In1−xSnx)3 alloys carried out with the use of FP-LAPW method. Our precise ab initio calculations for the rst time uniquelly con rmed experimentally based predictions that the ground state magnetic structure of the alloys is antiferromagnetic and that upon the In/Sn substitution the magnetic structure undergo transition, changing the antiferromagnetic ordering from the (π00)-type for the GdSn3 compound to the (ππ0)-type for the GdIn3 one. Moreover, calculations gave an explanation of the oscillatory variation of density of states at Fermi level indicated by XPS measurements.
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