Abstract
The effect of alloy scattering on the electron and hole impact ionization rates, α and β in the Ga1-xInxAsyP1-y alloy system lattice-matched to InP substrates is analyzed. A Monte Carlo simulation shows that the experimental α and β values in GaInAsP are very well explained by introducing alloy scattering, which greatly reduces α and β in the alloy system. This indicates that alloy scattering must be taken into account in estimating or deriving ionization rates in an alloy semiconductor.
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