Abstract
Zr can be stabilized by the element selected, such as Mg-stabilized Zr (MSZ), thus providing MSZ thin films with potentially wide applications and outstanding properties. This work employed the element from alkaline earth metal stabilized Zr to investigate the electrical properties of sol–gel AZrOx (A = alkaline earth metal; Mg, Sr, Ba) as dielectric layer in metal-insulator–metal resistive random-access memory devices. In addition, the Hume–Rothery rule was used to calculate the different atomic radii of elements. The results show that the hydrolyzed particles, surface roughness, and density of oxygen vacancy decreased with decreased difference in atomic radius between Zr and alkaline earth metal. The MgZrOx (MZO) thin film has fewer particles, smoother surface, and less density of oxygen vacancy than the SrZrOx (SZO) and BaZrOx (BZO) thin films, leading to the lower high resistance state (HRS) current and higher ON/OFF ratio. Thus, a suitable element selection for the sol–gel AZrOx memory devices is helpful for reducing the HRS current and improving the ON/OFF ratio. These results were obtained possibly because Mg has a similar atomic radius as Zr and the MgOx-stabilized ZrOx.
Highlights
Metal oxide materials for resistive random-access memory (RRAM) have gained considerable attention in recent years
According to our previous work, the density of hydrolytic particles, surface roughness, and oxygen vacancies all decrease when the difference in atomic radii between Ti and alkaline earth oxide based memory devices favors a reduction in the current in the high reluctance state (HRS) [11]
The larger coefficient of variation (CV) distribution for low resistance state (LRS) than for high resistance state (HRS) was associated with the the higher current that formed current conduction path
Summary
Metal oxide materials for resistive random-access memory (RRAM) have gained considerable attention in recent years. According to our previous work, the density of hydrolytic particles, surface roughness, and oxygen vacancies all decrease when the difference in atomic radii between Ti and alkaline earth oxide based memory devices favors a reduction in the current in the high reluctance state (HRS) [11]. Based on the Hume–Rothery rules, when the atomic radius of the solute and solvent atoms differs by more than 15%, phase separation may occur This phenomenon indicates that the different atomic radii of elements cause the different surface morphology of the AZrOx thin film. Solution-processed materials that allow easy control of the chemical composition and selection of suitable alkaline earth metals are needed to synthesize the resistive metal materials will help achieve better surface appearance and smooth surfaces. This result indicates the presence of Mg2+ valence thin film has nearly neither particles nor pits in the surface. Olattice lattice refers to thecan lattice oxygen, canasbea considered a criterion lattice
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