Abstract
Cd-free Cu(In,Ga)(S,Se)2 (CIGSSe) solar cells are fabricated by all-dry process, where CIGSSe absorbers with and without alkali (K and Cs) treatments are used. Urbach energy (EU) is estimated in long-wavelength edge of external quantum efficiency. It is revealed that reduced EU through K and Cs treatments yields decreased open-circuit voltage deficit. Carrier recombination rates across devices are reduced through K and Cs treatments, corresponding to increased carrier lifetimes and decreased EU. Conversion efficiency of Cd-free CIGSSe solar cells with a structure of glass/Mo/CIGSSe/Zn0.8Mg0.2O/Zn0.9Mg0.1O:Al is enhanced from about 17.8% (none alkali) to 18.5% (with K) and to 20.3% (with Cs).
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