Effect of AlGaN interlayer on luminous efficiency and reliability of GaN-based green LEDs on silicon substrate**Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFB0400600 and 2016YFB0400601) and the National Natural Science Foundation of China (Grant Nos. 61704069 and 51705230).

Abstract

The effect of AlGaN interlayer in quantum barrier on the electroluminescence characteristics of GaN-based green light emitting diodes (LEDs) grown on silicon substrate was investigated. The results show that AlGaN interlayer is beneficial to improve the luminous efficiency of LED devices and restrain the phase separation of InGaN. The former is ascribed to the inserted AlGaN layers can play a key role in determining the carrier distribution and screening dislocations in the active region, and the latter is attributed to the increased compressive stress in the quantum well. However, when the electrical stress aging tests were performed at a current density of 100 A/cm2, LED devices with AlGaN interlayers are more likely to induce the generation/proliferation of defects in the active region under the effect of electrical stress, resulting in the reduced light output power at low current density.