Effect of alcohol-based sulfur treatment on Pt Ohmic contacts to p-type GaN

Abstract

The effects of an alcohol-based (NH4)2S solution [t-C4H9OH+(NH4)2S] treatment on Pt Ohmic contacts to p-type GaN are presented. The specific contact resistance decreased by three orders of magnitude from 2.56×10−2 to 4.71×10−5 Ω cm2 as a result of surface treatment using an alcohol-based (NH4)2S solution compared to that of the untreated sample. The O 1s and Pt 4f core-level peaks in the x-ray photoemission spectra showed that the alcohol-based (NH4)2S treatment was effective in removing of the surface oxide layer. Compared to the untreated sample, the alcohol-based (NH4)2S-treated sample showed a Ga 2p core-level peak which was shifted toward the valence-band edge by 0.25 eV, indicating that the surface Fermi level was shifted toward the valence-band edge. These results suggest that the surface barrier height for hole injection from Pt metal to p-type GaN can be lowered by the surface treatment, thus resulting in a drastic reduction in specific contact resistance.