Effect of Al2O3 encapsulation on multilayer MoSe2 thin-film transistors

Abstract

We report the effect of Al2O3 encapsulation on the device performance of multilayer MoSe2 thin-film transistors based on statistical investigation of 29 devices with a SiO2 bottom-gate dielectric. On average, Al2O3 encapsulation by atomic layer deposition increased the field-effect mobility from 10.1 cm2 V−1 s−1 to 14.8 cm2 V−1 s−1, decreased the on/off-current ratio from 8.5 × 105 to 2.3 × 105 and negatively shifted the threshold voltage from −1.1 V to −8.1 V. Calculation based on the Y-function method indicated that the enhancement of intrinsic carrier mobility occurred independently of the reduction of contact resistance after Al2O3 encapsulation. Furthermore, contrary to previous reports in the literature, we observe a negligible effect of thermal annealing on contact resistance and carrier mobility during the atomic layer deposition of Al2O3. These results demonstrate that Al2O3 encapsulation is a useful method for improving the carrier mobility of multilayer MoSe2 transistors, providing important implications on the application of MoSe2 and other 2D materials into high-performance transistors.