Effect of Al-Doping on the Optical Properties of ZnO Thin Film Prepared by Thermal Evaporation Technique

M Musaab Khudhr,Khalid Haneen Abass

doi:10.18052/www.scipress.com/ijet.7.25

M Musaab Khudhr, Khalid Haneen Abass

Open Access

https://doi.org/10.18052/www.scipress.com/ijet.7.25

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Abstract

Aluminum doped ZnO (AZO) thin films doped has been prepared by thermal evaporation method onto glass substrates. The optical characterization has been studied by UV-Visible Spectrophotometer in the range (300-1100) nm. The transmittance increased with increasing Al-doping, while absorption decreases with increasing Al-doping content. The energy gap (Eg) values increased with increasing Al-doped in the ZnO:Al thin films. The refractive index, extinction coefficient, and real and imaginary dielectric constants obtained results show that doping content strongly affects the optical parameters of AZO thin films. Optical constants tend to decrease with increasing doping content.

Highlights

ZnO is an II-VI transparent conducting oxide (TCO) touted as a material of choice for shortwavelength optoelectronics [1,2]
ZnO thin films have attracted considerable interest in recent years for application such as: transparent conducting material in liquid crystal displays [5], solar cell [6], gas sensors [7], and catalyzers [8]. Various techniques such as molecular beam epitaxy (MBE) [9], pulsed laser deposition (PLD) [10], magnetron sputtering [11], chemical vapor deposition (CVD) [12], atomic layer deposition [13], electron beam evaporation [14], hydrothermal method [15], and sol-gel process [16] have been applied to ZnO thin film preparation
It study the optical properties of ZnO:Al thin films prepared by thermal evaporation method

Summary

Introduction

ZnO is an II-VI transparent conducting oxide (TCO) touted as a material of choice for shortwavelength optoelectronics [1,2]. It study the optical properties of ZnO:Al thin films prepared by thermal evaporation method. The optical properties of pure ZnO and have doped with different content of Al (0, 0.002, 0.004, 0.006) wt.% at thickness 125 nm with annealing temperature at 573 K were investigated using UV-Visible Spectrophotometer in the range (300-1100) nm.

Results

Conclusion