Abstract
Silicon dispersed β-FeSi2 with different aluminium concentrations are synthesized using eutectoid decomposition of α-Fe2Si5−xAlx (0 ≤ x ≤ 0.1). Phase fractions, microstructure and thermoelectric properties of the above compositions have been investigated. Al-doping in Si dispersed β-FeSi2 results in increased hole-carrier concentration thereby enhancing the electrical conductivity without compromising the Seebeck coefficient. This results in maximum power factor value of 4.7 μWcm−1 K−2 at 773 K for the sample with x = 0.1 which is significantly higher than that of an undoped sample. The thermal conductivity of the samples was fitted with the Debye-Callaway model to understand the various scattering processes involved. The analysis shows that an increased point defect scattering of phonons with Al-doping in addition to scattering by Si/β-FeSi2 interface lowers the thermal conductivity significantly.
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