Abstract
Abstract Renewable energy production via solar energy is a promising solution to advent the globally mounting energy needs. Therefore, our work has been planned to develop, high efficient optoelectronic devices, which are cost effective and easily fabricated. Successfully, we developed Al doped ZnO nanorods (NRs) by two step process. Initially by using sol-gel technique we grow the seed layers and further we succeed ZnO nanorods by a simple hydrothermal process without using any toxic solvents. The obtained nanorods show remarkable electrical and optical properties characterized by I-V characteristics, UV- vis, Photoluminescence (PL) spectroscopy techniques. In addition, we have also investigated the surface morphological properties from FESEM which indicates that NRs are hexagonal in shape and the diameter of the rod varies from 232 nm to 297 nm as the Al concentration changes from 1% to 10% in ZnO. Band gap of Al doped ZnO NR decreases on increasing the concentration of doping from 3.23 to 2.73 eV. The PL spectrum shows emission peaks in the UV and visible region. From this we conclude that, these materials are good candidate for the optoelectronic applications. Thus, our approach will probably fetch and derive a noble route for the fabrication of new materials.
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