Abstract
TiAlN thin films were deposited by using the reactive magnetron co-sputtering method whit individual Ti and Al targets, where the Ti and the Al targets were simultaneously powered by using DC and RF sources, respectively. the electrical resistivity and the structural and microstructural properties of the deposited TiAlN thin films and the effects of Al content, substrate temperature and nitrogen gas flow rate on those properties were investigated. At a low flow rate of nitrogen gas (0.51 sccm), the electrical resistivity of the films was found to increase with increasing AC power, but at a high flow rate of nitrogen gas, it was found to decrease. The structural and microstructural analyses performed by using X-ray diffraction and scanning electron microscopy (SEM) showed that with increasing substrate temperature from room temperature to 400 ℃, the films prepared at 400 ℃ have a crystalline structure while those prepared at room temperature had an amorphous nature. Also, the SEM analysis revealed that with decreasing AC power and increasing nitrogen flow rate, the size of the grains in the prepared films become larger.
Highlights
Ti–Al–C–N coatings were produced by reactive magnetron deposition at different substrate temperatures Ts (220, 340 and 440 °C) and bias voltages Ubias (–90, –150 and –200 V)
Using the energy dispersive X-ray spectroscopy method, it was found that the increase of the bias voltage led to a growth of argon atomic concentration and the (Al + Ti) / (Ti + N) ratio and to a decrease of the trace oxygen concentration in Ti–Al–C–N coatings
The growth of Ts promoted a decrease in the oxygen concentration
Summary
Ti–Al–C–N coatings were produced by reactive magnetron deposition at different substrate temperatures Ts (220, 340 and 440 °C) and bias voltages Ubias (–90, –150 and –200 V). Цель исследования – определение зависимости структурных особенностей, электрофизических и оптических характеристик покрытий Ti–Al–C–N, сформированных методом реактивного магнетронного осаждения, от технологических условий их изготовления – температуры нагрева и потенциала смещения на подложке.
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