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Abstract
Al-doped ZnO (AZO) films have been deposited on sapphire substrates at 400 °C for various Al doping concentrations (nAl) from 0 to 5 wt.% by RF magnetron sputtering and were subsequently annealed at 600 ∼ 800 °C for 3 min. The AZO films show the best structural, electrical, and optical properties at nAl = ∼2 wt.%, as demonstrated by Hall-effect, photoluminescence, X-ray diffraction, and optical transparency measurements. The nAl-dependent experimental results are discussed based on possible physical mechanisms. These studies provide a simple method of controlling nAl for optimizing the properties of AZO films for use as transparent conductive oxides.
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