Abstract
Amorphous AlZnSnO (AZTO) channel layer thin film transistors (TFTs) with various Al doping ratios were fabricated using a solution process. Electrical, structural, and optical properties were systematically investigated as a function of Al doping. At an appropriate level of Al doping (3.45at%), optimal electrical properties of AZTO TFTs were obtained, including mobility of 2.41cm2/Vs and a subthreshold swing of 0.68V/decade. From analyses of the chemical bonding states and optical band structure, this is attributed to suppression of oxygen related defect formation and a decrease of the band gap.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
