Abstract
We have studied the effect of Al and Ce ions on the optical absorption and luminescence of singlecrystal (Pb,Gd)3–y Ce y Al x Ga5–x O12 (x = 2.02, 2.09, 2.13, 2.17, 2.22; y = 0.02, 0.06, 0.07) films grown on (111)-oriented single-crystal Gd3Ga5O12 substrates by liquid-phase epitaxy from supercooled high-temperature solutions using solvents of the PbO–B2O3 system and growth charges containing 2.0, 2.1, or 2.2 mol % aluminum oxide and 0.03 or 0.2 mol % cerium oxide. The shift of the absorption bands of the Ce3+ 5d 1 and 5d 2 levels has been determined as a function of Al concentration in the films. The intensity of the Ce3+ luminescence bands of the films has been shown to increase with increasing Al and Ce concentrations.
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