Abstract

Glancing Angle Deposition (GLAD) technique was employed to synthesize Ag doped TiO2 nanowire on n-type Si-substrate. FEG-SEM confirms the perpendicular growth of Ag doped TiO2 nanowire with an average height and diameter of ~554 nm and ~40 nm respectively. The composition analysis by EDAX indicates the presence of Ti, O, Si and Ag elements. The increase in PL intensity has been observed with the increase in temperature. Following the growth of Ag doped TiO2 nanowire, Au contacts were deposited to form the Ag doped TiO2 NW based Schottky detector. The enhancement in the photoresponse of the device was observed at -4 V. The device also shows low leakage current of -0.049 μA at -1 V which makes it suitable for enlarged photodetector application.

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