Abstract
ZnO thin films were prepared on p-type Si (100) substrates by thesol-gel process. The influence of Ag doping at a content of 0.002 % onthe photoluminescence and current-voltage (I−V) characteristics of ZnOthin films has been investigated. It is foundthat Ag doping leads to a pronounced increase in the intensity of nearband edge emission at 3.23 eV and a remarkable red shift of the visiblebroadband at room temperature. The I−V characteristics ofZnO/p-Si heterojunctions are also changed. These results could beexplained by Ag substituting for Zn in Ag doped ZnO thin films.
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