Abstract
Effect of Additional Implantation with Oxygen Ions on the Dislocation-related Luminescence in Silicon-containing Oxygen Precipitates
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https://doi.org/10.1134/s1063782621100237
Journal: Semiconductors | Publication Date: Dec 1, 2021 |
Citations: 2 |
Effect of Additional Implantation with Oxygen Ions on the Dislocation-related Luminescence in Silicon-containing Oxygen Precipitates
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