Abstract
Consisting of light and non-toxic elements, higher manganese silicides (HMS) allow to be substituted with various elements. In the present study, elements Cr, V, Mo, Ge, Re and Ru have been added to HMS to improve the thermoelectric properties. Substitution of 2% Re only influences the thermal conductivity without affecting the carrier concentration and mobility. In all other substitutions, carrier concentration changes systematically and the carrier mobility shows weak temperature dependence due to additional alloy scattering. In addition, due to the effect of doping, substituted elements modify Resistivity (ρ) more dramatically than the Seebeck coefficient (α) behavior. Thermal conductivity (κ) is low for all compositions and the maximum value stays impressively at ∼3.3 W m−1 K−1. Thermoelectric Power factor (PF = α2/ρ) and the figure merit (ZT = α2 T ρκ−1) show a correlation with the carrier concentration measured at low temperatures (80–300 K). The highest PF ∼ 2.2 mW m−1 K2 and ZT ∼ 0.7 is measured for X + 2 mol%V17Ge31 (X = Mn0.95Cr0.05Si1.74) which is doped to the highest extent.
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