Abstract
In this paper, the effect of active layer (AC) thickness on the device performance and hot carrier (HC) instability of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) based on metal induced crystallization (MIC) is investigated. The thinner AC thickness of MIC poly-Si TFTs brings better device performance and HC instability, which may be respectively attributed to the better gate control to the active channel and different electric field distributions in the active channel and gate oxide.
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