Effect of activation volume on the defect-induced anomalous electronic transport in Rb $$_{0.8}$$ 0.8 Fe $$_2$$ 2 Se $$_2$$ 2

Abstract

We adopted an absolute-reaction model which is considering the hole(defect)-induced charged frictionless transport to explain the unusual experiment: Two single crystalline samples of the same nominal composition Rb $$_{0.8}$$ Fe $$_2$$ Se $$_2$$ were prepared using the self-flux technique via two different precursor routes. Although the difference in the final chemical composition falls within a narrow range, one was superconducting with a $$T_c \sim 31$$ K, while the other behaves like a narrow gap semiconductor.