Abstract
AbstractThe magnetic properties and the electronic states were investigated for a magnetic semiconductor (Zn,Cr)Te co‐doped nitrogen (N) as an acceptor impurity. A series of N‐doped Zn1–xCrxTe thin films with Cr compositions in the range of x = 0.06–0.09 and N concentrations in the range of [N] = 1018–1020 cm–3 were grown by molecular beam epitaxy (MBE), and the magnetization measurement using superconducting quantum interference device (SQUID) magnetometer and the X‐ray absorption fine structure (XAFS) measurements were performed. As a result, the disappearance of ferromagnetic behaviors and the change in X‐ray absorption near edge structure (XANES) spectra were observed at almost the same nitrogen concentration around [N] = 1 × 1020 cm–3. This correlated change in the magnetic properteis and the Cr electronic states was discussed in relation to a decrease of the electron density in the 3d impurity level due to the N co‐doping. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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