Abstract
This paper describes how the flat band potential of n-InP changes against the pH in aqueous media. This study involves two controlled processes that cause a reproducible surface chemistry on InP, a fact also confirmed by XPS analyses. The monitoring processes provide a surface freshly deoxidized and a surface entirely recovered by a thin film of polypolyphosphazene. A nerstian variation of the pH is observed on both surfaces. The slopes of both straight lines are kept constant versus the pH. However an overvoltage around 400 mV is detected between the two straight lines. The doping level obtained from both slopes is consistent with the undopped semiconductor. Despite the total covering of the surface by a thin film of polypolyphosphazene, an interfacial acid-base equilibrium can take place through the polyphosphazene film and the solvent.
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