Abstract
We present the results of experimental studies of internal quantum efficiency of photoluminescence of blue LED heterostructures based on multiple InxGa1–xN/GaN quantum wells with short-period InyGa1–yN/GaN superlattices containing small amounts of In at high levels of optical pumping. Introduction of an InyGa1–yN/GaN superlattice from the side of the n-region of a LED InxGa1–xN/GaN heterostructure allows to increase the value of its internal quantum efficiency presumably by reducing the quantum-confined Stark effect and Auger recombination rate.
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