Abstract
Chemical mechanical polishing (CMP) is one of the most important methods for solid surface ultra-precision machining, and the pH value of slurry is one of the key factors influencing the material removal rate and surface roughness during CMP process. The macromolecular chelating agent and KOH were mixed as a novel pH regulator in this study. The influence of the novel pH regulator on c-plane and r-plane sapphire material removal rate and surface roughness were also investigated. As the mixed ratio of macromolecular chelating agent and KOH is 1:20 and 1:10 for c-plane and r-plane sapphire respectively with the pH value of 10, the higher removal rate and lower surface roughness were gotten. Due to anisotropic atomic structure and hydrate layer formed on c-plane surface the material removal rates were 3.23 μm/h and 0.607 μm/h for c-plane and r-plane sapphire respectively, and the surface roughness were 0.226 nm and 0.309 nm. Through observing the change of pH value, the mean particle size and zeta potential with aging time, it was found the slurry with a novel pH regulator has a better stability.
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