Abstract

We have investigated the effect of a p-AlInAs electron stopper layer (ESL) in 1.3-/spl mu/m AlGaInAs/InP strained multiple quantum well (MQW) lasers. The ESL was inserted between the MQW and p-side separate confinement heterostructure (SCH) layers to suppress the electron overflow from the MQW to p-SCH. The characteristic temperatures of the threshold currents and slope efficiencies were improved in the lasers with the stopper layers, especially at higher temperatures. As a result, a maximum CW operating temperature T/sub max/ was increased by 20/spl deg/C, and T/sub max/ of 210 and 170/spl deg/C under pulse and CW excitation was achieved, respectively.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.