Abstract
The dependence of the diffusion coefficient of the minority carriers in InSb junction lasers on an external magnetic field applied parallel to the direction of current flow is studied. It is shown that the diffusion coefficient continuously decreases at low temperatures with increasing values of the longitudinal magnetic field. Unlike the decrease of the diffusion coefficient in a transverse magnetic field due to deflection of the minority carriers, the decrease in the longitudinal magnetic field results from the lowering of the electron quasi-Fermi level with respect to the bottom of the conduction band.
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