Effect of a lateral electric field on an off-center single dopant confined in a thin quantum disk

Abstract

The effect of a lateral electric field on a donor impurity confined in a thin quantum disk is studied theoretically in the framework of mass approximation and using the Ritz variational approach. We show that the binding energy depends on several parameters: the dot size, the position of the donor impurity, the lateral field strength, and its orientation relative to the axis containing the impurity. When the impurity is located at one edge and the electric field is oriented in the opposite direction, the binding energy is considerably reinforced due to the simultaneous additive effects of coulombic potential and electrostatic force. The competition between these effects modifies considerably the probability densities and allows a better comprehension of the binding energy variations. This interesting behavior can contribute to an better understanding of the experimental optical response.