Abstract
n-Si single crystals produced by the floating zone method are studied. The concentration of electrons in the crystals is 6 × 1013 cm−3. The samples are irradiated with 25-MeV protons at 300 K. The irradiation dose is varied in the range (1.8–8.1) × 1012 cm−2. The measurements are carried out by means of the Hall technique in the range of temperatures T = 77−300 K. In samples irradiated with different proton doses, a sharp increase in the experimental effective Hall mobility μeff or a deep minimum in the dependence μeff(T) in the region of phonon scattering of electrons is observed immediately after irradiation or after aging of the samples, respectively. The observed effect is attributed to the formation of high-conductivity (metal-like) inclusions in the irradiated samples and to changes in the degree of screening of the inclusions by impurity-defect shells in relation to the irradiation dose, the time of natural aging, and the temperature of measurements. The impurity-defect shells are formed around metal-like inclusions during isochronal annealing or natural aging of the irradiated samples. It is suggested that metal-like inclusions formed in the n-Si crystals on irradiation with protons with the energy 25 MeV are atomic nanoclusters with an 80-nm radius.
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