Abstract
AbstractWe report on the use of indium‐tin oxide surface modification, by grafting of highly polar p‐disubstituted benzenes, in the fabrication of light‐emitting diodes. The polar compounds possess COCl or SO2Cl grafting groups and CF3 or NO2 as highly electronegative groups, leading to the formation of a dipolar monolayer, which brings about an increase in ITO work function, thereby reducing the barrier for hole injection into luminescent polymers. We observe that the effect of this self‐assembled monolayer, in terms of light‐onset voltage, efficiency and luminance, is at least comparable to the use of a hole injection layer of doped poly[(3,4‐ethylenedioxy)thiophene] for LEDs using poly({2‐[(2‐ethylhexyl)oxy]‐5‐methoxy‐1,4‐phenylene}vinylene) (MEH‐PPV) and polyfluorene blends as active layers.
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