Abstract
The effects of a Cu buffer layer on the Co/Cu bilayer system grown on Si(100) were examined from the magneto-optical Kerr effect and by X-ray photoelectron spectroscopy. The structural, magnetic and chemical properties of Co thin films varied with the Cu buffer layer thickness. As the Cu buffer layer thickness was varied, the coercivity of the Co/Cu bilayer increased and reached saturation with further increases in Cu buffer layer thickness. Furthermore, the structural changes of Co layer were observed. The depth-dependent chemical profile across the interfaces showed a change in the chemical state of the Co 2p core-level across the interface, which might be the physical origin of the enhanced coercivity.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.