Abstract
In this work, a numerical simulation of a silicon based solar cell (SC) is carried out using Silvaco-Atlas software. The back contact and the back surface field (BSF) combined with a passivation layer (PL) realized by using SiO2 tunneling layer, is addressed in this paper. It is demonstrated that a proper choice of the BSF and PL can enhance a Schottky back contact based solar cell compared to its ohmic counterpart. BSF has to be properly doped to reduce the barrier of the Schottky contact. The tunnel oxide is a vital part in this solar cell. It is required to achieve excellent interface passivation and has to have an optimum thickness and below this thickness, the SC performance is enhanced by a tunneling effect, while it is deteriorated by the fill factor reduction above this optimum thickness.
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