Effect of 750 keV Argon ion irradiation on nc ZnO[sbnd]SiOx thin films

Abstract

Nanocomposite (nc) ZnOSiOx thin films were grown using rf magnetron sputter deposition technique and post-deposition annealing at 750°C. These films were irradiated with 750keV Argon ions at fluences in the range from 1×1015 to 1×1017ions/cm2, using Low Energy Ion Beam Facility (LEIBF) at IUAC. X-ray diffraction (XRD) patterns of the as-deposited irradiated films show decrease in intensity of ZnO peaks relative to pristine film. Fourier transform infrared (FT-IR) spectroscopy measurements of the as-deposited irradiated films indicate the breakage of ZnO, ZnOSi and SiOSi bonds in them, which is substantiated by FT-IR measurements of 750°C annealed films that were irradiated at a fluence of 1016ions/cm2. Photoluminescence (PL) measurements show drastic decrease of visible PL emission from as-deposited irradiated films. Current−Voltage (I–V) measurements show decrease in surface resistance of irradiated films by three orders of magnitude. The results suggest that 750keV argon ion irradiation of nc ZnO−SiOx films has resulted in the formation of non-radiative defects in ZnO phase and damage in SiOx, and amorphization in Zinc silicate phase. These results are explained on the basis of the dominant energy loss mechanism of low energy ions in materials.