Abstract
We have investigated the generation of interface traps during 60Co irradiation and Fowler-Nordheim (FN) injection in MOS structures with thin plasma nitrided gate oxides. By using deep level transient spectroscopy and capacitance-voltage measurements, we have studied the impact of nitridation time on the creation of fast and slow states in the silicon bandgap. After FN injection, electrical relaxation of the interface has been interpreted as the superposition of two mechanisms: an irreversible physico-chemical time-dependent transformation and a reversible bias-dependent neutralization.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
