Abstract
The effect of 2.2 MeV electron irradiation and subsequent annealing on the extrinsic emission peaked at hvm (77 K) near 1.37 eV (due to radiative electronic transitions in VAsZnGa pairs) in zinc-doped p-type GaAs is studied. Non-trivial non-monotonic changes in the 1.37 eV emission intensities are found. An analysis of the dependences obtained shows that following one after another processes of annealing-induced (at moderate heating temperatures) increase in the concentration of the 1.37 eV radiative centres (resulting from interaction of radiation-induced arsenic vacancies VAs with substitutional zinc atoms ZnGa) and annealing-induced (at elevated heating temperatures) decrease in the amount of 1.37 eV radiative centres (resulting from radiation-induced decrease of the thermal stability of VAsZnGa pairs), may well account for the 1.37 eV emission intensity variations observed in electron-irradiated and subsequently annealed p-type GaAs(2n) crystals. [Russian Text Ignored]
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