Effect of 120 MeV Ag9+ irradiation on Ga2O3 thin film deposited on quartz and GaN substrate

Abstract

In this article, the effects of irradiation of silver ions on gallium oxide (Ga2O3) thin film deposited on quartz and Gallium Nitride (GaN) substrates are analyzed. The transmittance and Tauc s curves are plotted for pristine and irradiated samples. The proposed substrates have a very high impact on the transmittance, e.g. ∼83% in the case of quartz whereas only ∼6.4% in the case of GaN, for pristine samples. The transmittance decreases to pristine for low irradiance fluence (ϕ = 1 × 1011 cm−2) whereas increases for high fluence (ϕ = 1 × 1012 cm−2), for both of the substrates. The obtained band gap for pristine samples is 5.18 eV and 3.42 eV in the case of quartz and GaN, respectively. The band gap decreases to pristine for low fluence (5.11 eV at ϕ = 1 × 1011 cm−2) whereas increases slightly for higher fluence (5.21 at ϕ = 1 × 1012 cm−2), in the case of quartz. The band gap decreases after irradiation in the case of GaN, i.e., 3.402 eV, 3.400 eV, and 3.403 eV at ϕ = 1 × 1011 cm−2, ϕ = 5 × 1011 cm−2, and ϕ = 1 × 1012 cm−2, respectively.