Abstract
Swift heavy ion (SHI) irradiation of materials induces variety of functionalities and tenability in advance materials. Recent observations of electrical switching in perovskite oxides have triggered a lot of interest for its potential use as non volatile random access memory (NVRAM). We report on the resistance switching induced by swift heavy ion SHI irradiation in La0.7Sr0.3MnO3 (LSMO) thin films grown on SiO2 substrates by chemical solution deposition technique. Well defined hysteresis loops with sharp on-off transition in the I-V curves were observed for the sample irradiated with 100 MeV Ag+7 ions at 1x1012 ions/cm2, indicating that the sample possess low resistance state (LRS) and high resistance state (HRS). Symmetrical resistance ratio (Rhigh/Rlow) of ~ 330% at -1.7 V has been achieved whereas the pristine samples showed only linear I-V characteristics. The RS is bipolar and may be attributed to SHI induced defects in the device. Such defect induced resistive switching has recently been proposed theoretically and our results are direct evidence of the phenomenon.
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