Abstract
The effect of irradiation by protons with an energy of 15 MeV with fluences of (1-40)٠1012 cm-2 on the spectral characteristics of UV 4H-SiC photodetectors was considered. Photodiodes with Schottky barriers were formed by thermal vacuum sputtering with a thickness of 20 nm and a diameter of 8 mm on 4H-SiC structures with CVD epitaxial layers with a concentration of uncompensated donors Nd-Na=(1-4)٠1014 cm-3 grown on n+-4H-SiC substrates. UV photodetectors withstand irradiation by protons with a fluences of 4٠1013 cm-2 with a photosensitivity improvement due to the gettering of simple radiation defects by localized cluster and amorphous areas, and partial structural improvement of the irradiated material. Irradiation of photodetectors by 15 MeV protons with a fluence of 4٠1012 cm-2 at a temperature of 2000 C led to an increase in quantum efficiency compared to samples irradiated in similar modes at 250 C due to an additional defective rearrangement.
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