Abstract
This paper discussed the applications of electron energy loss spectroscopy (EELS) for element characterization in semiconductor manufacturing. The first experiment compared the ability of element chemical states analysis between EELS and X-ray photoelectron spectroscopy (XPS). Some phase change random access memory (PcRAM) product suffered TiN connection electrode failure. EELS and XPS were used separately to check the chemical states of TiN film and found it was partially oxidized. The 2nd experiment compared the ability of EELS and EDX for element distribution mapping. These two methods were used to analyze elements distribution in 28nm high-k metal gate NMOS device. Results showed EDX was influenced by element convolution and multiple scattering but EELS not, which means EELS can give more accurate information of element distribution.
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