Eduction Position Control of Incorporated Gallium in Diamond-Like Carbon Deposited by Focused-Ion-Beam Chemical Vapor Deposition

Abstract

Materials deposited by focused-ion-beam chemical vapor deposition (FIB-CVD) have numerous interesting material characteristics. They contain gallium (Ga) because Ga is implanted by Ga+ FIB irradiation. Atomic ratios of the diamond-like carbon (DLC) deposited using phenanthrene (C14H10) as a gas source for FIB-CVD has the ratio of C : Ga = 95 : 5. And, It is also noted that the incorporated Ga in DLC is again segregated from DLC by annealing treatment. In this study, we found that Ga became agglomerated and was separated out from DLC by annealing treatment. Furthermore, Ga was passed out preferentially through the structural defect onto the DLC surface. Furthermore, the eduction position control of Ga sphere could be achieved using the via hole fabricated on the nanostructure by FIB-etching. This technique is utilizable for the formation of of junctions, such as a nano-bumps, to combine nanoelectromechanical devices.