Abstract
Electrically detected magnetic resonance (EDMR) enables us to obtain magnetic properties of the localized states in devices. Here we developed the EDMR measurement system with a low noise, and applied it to the defect states in a silicon metal-oxide-semiconductor field-effect-transistor. The EDMR signal was observed for the spin dependent recombination process at room temperature. The gate voltage dependence of the signal intensity indicated that the signal originates from the silicon dangling bonds at the Si/SiO2 interface.
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