Editorial

Abstract

Recent developments in both new materials and their multi-functional co-integration raise some fundamental questions that must be addressed theoretically and experimentally. This issue contains 8 articles documenting a selection of contributions to the symposia BB and V of the 2018 European Materials Research Society Spring Meeting, held June 18–22, 2018 in Strasbourg, France. Symposium V brought together researchers who co-integrate complementary functionalities by the heteroepitaxial growth of dissimilar materials. The challenges due to the heterogeneity of materials properties were at the heart of the symposium, with both experimental and theory-modelling perspectives discussed. A wide range of hetero-integration systems were considered (e.g. III-V/Si, oxides/semiconductors, organic/inorganic, 2D materials on 3D templates). Strategies were discussed for understanding and overcoming the problems associated with each hybrid material system, such as interfacial effects, extended defects and chemical mixing/segregation. Symposium BB focused on optical and X-ray techniques for characterizing advanced and hybrid material systems. The whole range of photon wavelengths was considered whereby many complementary characteristics of complex material systems can be explored. The works collected here not only reflect the recent state of the art in materials co-integration and advanced characterization techniques, but also point out future applications such as nanophotonics, quantum computing and energy conversion. Among its prominent contributions, this special section includes three Feature Articles: on 2D materials nanoelectronics from M. Dragoman et al. (DOI 10.1002/pssa.201800724), rare-earth doping of topological insulators from T. Hesjedal et al. (DOI 10.1002/pssa.201800726), and two-photon photoemission spectroscopy for studying semiconductor interfaces from D. Friedrich et al. (DOI 10.1002/pssa.201900251). Hybrid heteroepitaxial growth of MnSb(0001) on GaAs(111) is investigated by G. Bell et al. (DOI 10.1002/pssa.201800600), while shallow junctions in GaAs are studied by J. Duan et al. (DOI 10.1002/pssa.201800618). I. Shlyakhov and coworkers (DOI 10.1002/pssa.201800616) are determining band alignments of MoS2 monolayers with SiO2 and Al2O3 with internal photoemission. In situ and ex situ ellipsometry is proposed as a technique of choice by P. Petrik et al. (DOI 10.1002/pssa.201800676), to study zirconium surfaces for nuclear applications. Finally, the growth of Gd-doped SBN thin films on Pt-coated MgO (100) substrate is studied by C. L. Mak et al. (DOI 10.1002/pssa.201800660). We gratefully acknowledge the efforts of all authors and reviewers, financial assistance of the European Materials Research Society and INSA Rennes, the journal's assistance in realizing this special issue and the continuous support of the editors. Guest Editors Mircea Modreanu, Charles Cornet, Olivier Durand, Hiroyuki Fujiwara, Gerald E. Jellison, Gavin Bell, and Clement Merckling